Micron details ambitious DRAM and NAND roadmap — 3D NAND, High-NA EUV, new materials, and custom silicon makes a comeback
- ID
- 42994
- Status
- summarized
- Published
- 04 Nov 2026, 10:00 PM
- Fetched
- 05 Nov 2026, 12:01 AM
- Provider
- Tom's Hardware
- Category
- technology
- Original URL
- https://www.tomshardware.com/pc-components/dram/micron-details-ambitious-dram-and-nand-roadmap-3d-nand-high-na-euv-new-materials-and-custom-silicon-makes-a-comeback
- Source URL
- https://www.tomshardware.com/feeds/all
Summary
- Score
- 5.5
- Created
- 05 Nov 2026, 12:02 AM
- Tags
- Audience
- developersai_ml_learnerssaas_founders
What happened
Micron disclosed multi-year DRAM and NAND roadmaps covering 3D DRAM, 3D NAND, wafer bonding, new materials for smaller NAND cells, High-NA EUV lithography, and an expanded portfolio of custom DRAM and NAND products for AI workloads. Scott DeBoer, Micron's president and chief technology and products officer, said DRAM is nearing atomic limits, with several planar nodes still ahead but a focus on introducing 3D DRAM at the right cost and performance point.
Why it matters
The excerpt gives no dates, capacities, or prices, so builders cannot make a procurement or capacity-planning decision from it yet. The concrete signal is that Micron expects custom memory for AI architectures to become more mainstream, which could affect future server and accelerator memory options rather than today's laptop or cloud pricing.
Discussion angle
If custom DRAM and NAND for AI chips becomes mainstream, does memory supply fragment enough to raise costs or reduce standard options for general-purpose cloud and developer workloads?